AUIRF1010EZS Datasheet, International Rectifier

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AUIRF1010EZS Features and benefits

O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Com.

AUIRF1010EZS Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

AUIRF1010EZS Description

www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junctio.

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